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MMST2222A [BL Galaxy Electrical]

Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
MMST2222A
型号： MMST2222A
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

Silicon Epitaxial Planar Transistor
硅外延平面晶体管

晶体 晶体管 光电二极管
文件： 总3页 (文件大小：161K)
中文：  中文翻译
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BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
MMST2222A  
FEATURES  
z
z
z
Epitaxial planar die construction.  
Complements the MMST2907A.  
Ultra-small surface mount package.  
Pb  
Lead-free  
APPLICATIONS  
z
NPN Silicon Epitaxial Planar Transistor.  
SOT-323  
ORDERING INFORMATION  
Type No.  
Marking  
K3P  
Package Code  
SOT-323  
MMST2222A  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
VCBO  
75  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
40  
V
6
V
Collector Current -Continuous  
Collector Dissipation  
600  
200  
mA  
mW  
℃
PC  
Junction and Storage Temperature  
Tj,Tstg  
-55~150  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTF006  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
MMST2222A  
Parameter  
Symbol  
Test conditions  
MIN  
75  
40  
6
TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=10μA,IE=0  
IC=10mA,IB=0  
IE=10μA,IC=0  
VCB=60V,IE=0  
VEB=3V,IC=0  
V
V
V
10  
10  
nA  
nA  
Emitter cut-off current  
IEBO  
VCE=10V,IC=0.1mA  
VCE=10V,IC=1mA  
VCE=10V,IC=10mA  
VCE=10V,IC=150mA  
VCE=10V,IC=500mA  
35  
50  
75  
-
-
-
DC current gain  
hFE  
100 300  
40  
-
ICE=500mA,IB=50mA  
ICE=150mA,IB=15mA  
0.3  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
V
V
1.0  
1.2  
2.0  
ICE=500mA,IB=50mA  
ICE=150mA,IB=15mA  
0.6  
VBE(sat)  
-
VCE=20V,  
Transition frequency  
fT  
300  
MHz  
pF  
IC= 20mA,f=100MHz  
Collector output capacitance  
VCB=10V,IE=0,f=1MHz  
Cob  
8
Document number: BL/SSSTF006  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
MMST2222A  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-323  
SOT-323  
Dim  
A
Min  
1.8  
Max  
2.2  
B
1.15  
1.35  
C
D
E
1.0Typical  
0.15  
0.25  
1.2  
0.35  
0.40  
1.4  
G
H
J
0.02  
0.1  
0.1Typical  
K
2.1  
2.3  
All Dimensions in mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
MMST2222A SOT-323  
3000/Tape&Reel  
Document number: BL/SSSTF006  
Rev.A  
www.galaxycn.com  
3

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